IMAGE SENSOR WITH HETERO JUNCTION BIPOLAR TRANSISTOR AND FABRICATIN METHOD OF IT

摘要

An image sensor having a hetero junction bipolar transistor and a manufacturing method thereof are provided to reduce the number of transistors by amplifying an optical signal current in a reverse operation. An anode of a photodiode is connected to a power voltage terminal. A base(31) of a bipolar transistor is connected to a cathode of the photodiode. A collector(13) of the bipolar transistor is connected to the anode of the photo diode and the power voltage terminal. The bipolar transistor generates a detection signal amplified by an emitter. A reset PMOS transistor connects the emitter of the bipolar transistor to a ground voltage terminal according to a reset signal applied to a gate(41). A select PMOS transistor transfers the emitter signal of the bipolar transistor to the outside according to a select signal applied to the gate.