发明名称 SEMICONDUCTOR MEMORY DEVICES HAVING FUSES AND METHODS OF FORMING THE SAME
摘要 <p>A semiconductor memory device having a fuse and a method for forming the same are provided to suppress contamination due to an opening by removing the opening for exposing a fuse. A substrate(100) includes a fuse region. A fuse isolation layer(105a) is arranged on the fuse region in order to define a fuse activation region. A fuse recess region is formed on the fuse activation region. A fuse conductor(130a) is arranged on the fuse recess region. A fuse insulating layer(125a) is inserted between a lateral surface and a bottom surface of the fuse recess region and the fuse conductor. A fuse doping region(140) is formed on the fuse activation region adjacent to the fuse conductor by inserting the fuse insulating layer.</p>
申请公布号 KR20070114557(A) 申请公布日期 2007.12.04
申请号 KR20060048288 申请日期 2006.05.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, MIN WK
分类号 H01L21/82 主分类号 H01L21/82
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