发明名称 |
SEMICONDUCTOR MEMORY DEVICES HAVING FUSES AND METHODS OF FORMING THE SAME |
摘要 |
<p>A semiconductor memory device having a fuse and a method for forming the same are provided to suppress contamination due to an opening by removing the opening for exposing a fuse. A substrate(100) includes a fuse region. A fuse isolation layer(105a) is arranged on the fuse region in order to define a fuse activation region. A fuse recess region is formed on the fuse activation region. A fuse conductor(130a) is arranged on the fuse recess region. A fuse insulating layer(125a) is inserted between a lateral surface and a bottom surface of the fuse recess region and the fuse conductor. A fuse doping region(140) is formed on the fuse activation region adjacent to the fuse conductor by inserting the fuse insulating layer.</p> |
申请公布号 |
KR20070114557(A) |
申请公布日期 |
2007.12.04 |
申请号 |
KR20060048288 |
申请日期 |
2006.05.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, MIN WK |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|