| 摘要 |
<p>A method for fabricating a flash memory device is provided to increase an overlap area between a floating gate and a control gate by forming the floating gate with a concave shape. A first conductive layer(12), an etch-stop layer(13), and a second conductive layer(14) are stacked on a semiconductor substrate(10). A trench is formed by etching the second conductive layer and the etch-stop layer. A third conductive layer is formed on an entire surface including the trench. A concave floating gate(17) is formed by etching the third conductive layer having a predetermined interval from the trench, the second conductive layer, the etch-stop layer, and the first conductive layer. The etch-stop layer is formed with a conductive layer or an insulating layer.</p> |
