| 摘要 |
A light emitting diode and its manufacturing method are provided to improve crystalline quality if a barrier layer and to increase internal quantum efficiency of an active layer by forming a buffer layer made of silicon nitride in the middle of the barrier layer. An n-type semiconductor layer is formed on a substrate. An active layer(40) is formed on the n-type semiconductor layer. A p-type semiconductor layer is formed on the active layer, The active layer is a quantum well structure that is alternatively laminated with at least one well layer(41) and at least one barrier layer(45). The barrier layer includes a first barrier layer(46), a buffer layer(47a), and a second barrier layer(48). The buffer layer is formed on the first barrier layer. The second barrier layer is formed on the buffer layer. The buffer layer includes silicon nitride. A thickness of the buffer layer is less than 10 nm. |
