PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND FIRING METHOD THEREOF

摘要

A phase-change memory device and its firing method are provided to improve a stable firing operation by using a write circuit for supplying a write pulse and a firing pulse without employing an additional circuit block. A phase-change memory device is comprised of an address buffer(128), a low decoder(124), a column decoder(126), a memory cell array(110), and a write circuit(130). The memory cell array includes a plurality of phase-change memory cells. The write circuit supplies a write pulse for writing write date on the phase-change memory cell in response to a first voltage from the external at normal operation mode, and a firing pulse for firing the phase-change memory cell in response to a second voltage from the external at test mode. The first voltage is a source voltage and the second voltage is an external boosted voltage having a voltage level higher than that of the first voltage.