| 摘要 |
A method for manufacturing an MIM(Metal-Insulator-Metal) capacitor of a semiconductor device is provided to prevent breakdown of a dielectric thin film and to improve an electrical characteristic by eliminating a side of an upper electrode where an etch damage of the dielectric thin film is generated. A lower electrode(102) comprised of a lower metal layer, and a dielectric thin film(104) are sequentially formed on an upper portion of an interlayer dielectric(100) of a semiconductor substrate. An upper metal layer is laminated on an upper portion of the dielectric thin film. A pattern(108) is formed on an upper portion of the upper metal layer to define an upper electrode region of a capacitor. The upper metal layer exposed by the pattern is dry-etched to form an upper electrode(106a) of the capacitor. The sidewall of the upper electrode exposed by the pattern is removed as much as a predetermined width and then the pattern is removed.
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