METHOD FOR FABRICATING A DUAL DAMASCENE PATTERN

摘要

A method for manufacturing dual damascene patterns is provided to reduce a manufacturing time and improve throughput by performing ashing process, a process of removing an etch stop layer, and anti-oxidation process of bottom metal lines in one chamber. An etch stop layer is formed on a lower insulation layer including a metal line layer. Dual damascene patterns including a via hole and a trench are formed on an interlayer dielectric formed on an upper portion of the etch stop layer. A trench is formed using a mask pattern for the trench and then ashing is performed on the mask pattern(S100). The etch stop layer formed by the dual damascene patterns is etched to expose the metal line layer in a chamber for executing the ashing(S102). By supplying anti-oxidation gas into a chamber for executing the etching, the oxidation of the metal line layer is prevented(S104).