| 摘要 |
<p>A method for manufacturing a mask for semiconductor device manufacturing is provided to enhance overlay margin by implementing easily optical approximate correction. By extending mask patterns having chamfered portions along X and Y axes, the chamfered portions are removed(S20). By reducing the extended mask patterns along the X and Y axes, mask patterns with an original size are recovered(S30). The recovered mask patterns are corrected so as to reduce error due to the interference of beams. The recovered mask patterns is then formed on a mask(S50).</p> |
