METHOD OF FORMING METAL LINES AND BUMPS FOR SEMICONDUCTOR DEVICES

摘要

A method for forming wires and bumps for semiconductor devices is provided to reduce a manufacturing cost and improve throughput. First and second seed metal layers(120a,125) are formed on a semiconductor chip(110). A mask is formed on the first seed metal layer to be formed wires and a first seed metal layer to be not formed the wires is exposed. Metal oxide(120b) is formed by oxidizing the exposed first seed metal layer. Then, the mask is removed. Wiring metals(130a) is formed on the exposed surface by removing the mask, thereby forming wires. The second seed metal layer to be not formed the wires is removed.