| 摘要 |
An over driver control signal generator in a semiconductor memory device is provided to assure a stable voltage level of a normal driving voltage stage regardless of a power supply voltage(VDD) level. An over driver control signal generator in a semiconductor memory device generates a bit line over driver control signal by receiving an over driving signal generated by receiving an active command. The over driver control signal generator comprises a first pulse generation unit(510), a second pulse generation unit(520), a power supply voltage level detection unit(530), and a multiplexing unit(540). The first pulse generation unit generates a first pulse signal with first pulse width in response to the over driving signal. The second pulse generation unit generates a second pulse signal with second pulse width shorter than the first pulse width in response to the over driving signal. The power supply voltage level detection unit detects a power supply voltage level. The multiplexing unit outputs the first pulse signal or the second pulse signal as the over driver control signal selectively in response to a detection signal outputted from the power supply voltage level detection unit.
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