| 摘要 |
A method for manufacturing a semiconductor device is provided to form a gate pattern having a peripheral region with a reduced CD(Critical Dimension) and a cell region whose CD is uniformly maintained by selectively trimming only a hark mask pattern of the peripheral region. A conductive material(12) for a gate is formed on a substrate(11) having a cell region and a peripheral region. Hard mask patterns(13A,14A) are formed on the conductive material for a gate. A mask pattern is formed on the hard mask pattern of the cell region to open the peripheral region. The hard mask pattern of the peripheral region is trimmed. The mask pattern is removed. The conductive material for gate is etched with the hard mask patterns to form gate patterns. When the mask pattern is formed, a photoresist layer is coated on the hard mask and the photoresist layer is exposed, developed, and patterned to open only the peripheral region.
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