| 摘要 |
A POLISHING COMPOSITION COMPRISING AN ABRASIVE HAVIING AN AVERAGE PRIMARY PARTICLE SIZE OF 200 NM OR LESS, AN OXIDIZING AGENT, AN ACID HAVING A pK1 OF 2 OR LESS AND /OR A SALT THEREOF, AND WATER, WHEREIN THE ACID VALUE (Y) OF THE POLISHING COMPOSITION IS 20MG KOH/G OR LESS 0.2 MG KOH/G OR MORE; A PROCESS FOR REDUCING FINE SCRATCHES OF A SUBSTRATE, COMPRISING POLISHING A SUBSTRATE TO BE POLISHED WITH THE ABOVE-MENTIONED POLISHING COMPOSITION; AND A METHOD FOR MANUFACTURING A SUBSTRATE, COMPRISING POLISHING A SUBSTRATE TO BE POLISHED WITH THE ABOVE-MENTIONED POLISHING COMPOSITION . THE POLISHING COMPOSITION CAN BE SUITABLY USED FOR FINAL POLISHING MEMORY HARD DISK SUBSTRATES AND POLISHING SEMICONDUCTOR ELEMENTS.
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