| 摘要 |
<p>A method for forming a metal gate of a semiconductor device is provided to reduce process time and to prevent abnormal oxidation of an oxide layer by using a plasma nitride process to control a thickness of the oxide layer. A gate dielectric(110), a gate conductive layer(140), and gate metal layers(150,160) are layered on a semiconductor substrate(100). The gate metal layers and the gate conductive layer are etched to form a gate stack. When the gate metal layers and the gate conductive layer are etched, a portion of the side of the gate conductive layer is exposed. A first capping layer is formed on the entire surface of the semiconductor substrate where the gate stack is formed. The sidewall of the gate stack including the first capping layer is nitrided to form a second capping layer(180a). As a spacer is formed on the sidewall of the gate stack by performing an anisotropic etching on the second capping layer, the gate conductive layer is exposed. The gate conductive layer and the gate dielectric are etched by using the spacer as a sidewall barrier to form a gate electrode.</p> |
