METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH RECESS GATE

摘要

A method for manufacturing a semiconductor device having a recess gate is provided to prevent excessive damage and a step of an upper portion of a conductive layer for forming a gate by planarizing the conductive layer and performing a second deposition after depositing the conductive layer for forming a gate pattern. A hard mask pattern for a recess is formed on an upper portion of a semiconductor substrate(21) on which a field oxide layer(22) is formed. The semiconductor substrate is etched by using the hard mask pattern as a barrier to form a recess. A first conductive layer(26) is formed on an upper portion of the entire structure of the substrate including the recess and the hard mask pattern. The first conductive layer is planarized. A second conductive layer is formed on the planarized first conductive layer. The hard mask pattern is an oxide layer. The first and second conductive layers are poly silicon layers.