| 摘要 |
A semiconductor memory device and a driving method thereof are provided to improve the reliability of data by accelerating level transition of the data applied to a global input/output line, by supplying termination resistance to the global input/output line during a non-idle state. A global input/output line(GIO) transfers data. A termination circuit(200) supplies termination resistance to the global input/output line during a non-idle state. In the non-idle state, the device is driven by a new active command and a precharge command is not applied in the non-idle state. The termination circuit includes a resistor part and a storing part. The resistor part supplies the termination resistance to the global input/output line during the non-idle state, and the storing part stores data loaded in the global input/output line during an idle state.
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