| 摘要 |
<p>A non-volatile memory device and a manufacturing method thereof are provided to improve erase efficiency of the non-volatile memory device by concentrating electric field to reduce an erase voltage through a tip-shaped edge. A semiconductor substrate(102) includes a first upper surface(102a), a second upper surface(102b) lower than the first upper surface, and a first side(102C) between the first upper surface and the second upper surface. A charge storing pattern(120) is provided on the first side. The charge storing pattern is extended on the first upper surface and the second upper surface. A source region(150S) is adjacent to the charge storing pattern. The source region is arranged under the first upper surface, the second upper surface, and the first side. A drain region(150d) adjacent to the charge storing pattern is arranged on to the semiconductor substrate. The drain region is provided under the second upper surface.</p> |
