| 摘要 |
<p>A NAND-type flash memory device and a manufacturing method thereof are provided to reduce contact resistance by contacting a first poly silicon layer and a second poly silicon layer of a source selective transistor to a drain selective transistor through a low resistance layer comprised of a silicide and a barrier metal. A source selective transistor, a memory cell, and a drain selective transistor are formed on a semiconductor substrate(200). Opening units are formed in the source selective transistor and the drain selective transistor to connect a floating gate(220) and a control gate(290). A low resistance layer(292) is formed in the opening unit. The low resistance layer is a metal silicide layer. The metal is one of titanium(Ti), tantalum(Ta), cobalt(Co), platinum(Pt), and niobium(Nb). A spacer is arranged between the low resistance layer and a sidewall of the opening unit. The spacer is a poly silicon layer.</p> |
