| 摘要 |
<p>A method for manufacturing a semiconductor device having a bulb-type recess gate is provided to prevent movement phenomena of a seam of a conductive layer due to a subsequent process by securing a maximum thickness of the conductive layer formed on a bulb pattern. A bulb-type recess(12) comprised of a neck pattern(12a) and a bulb pattern(12b) is formed on a semiconductor substrate(11). A first conductive layer is formed on the substrate including the recess. The first conductive layer has a thickness enough to open the neck pattern. As a part of the first conductive layer is oxidized, an oxide layer is formed so that the neck pattern is gap-filled. The oxide layer is removed. A second conductive layer(15) is formed on the first conductive layer remaining in the recess. The first and second conductive layers are poly silicon layers. The first and second conductive layers include amorphous poly silicon.</p> |
