| 摘要 |
THE INVENTION RELATES TO A SUBSTRATE FOR EPITAXY, ESPECIALLY FOR PREPARATION OF NITRIDE SEMICONDUCTOR LAYERS. INVENTION COVERS A BULK NITRIDE MONO-CRYSTAL CHARACTERIZED IN THAT IT IS A MONO-CRYSTAL OF GALLIUM NITRIDE AND ITS CROSS-SECTION IN A PLANE PERPENDICULAR TO C-AXIS OF HEXAGONAL LATTICE OF GALLIUM NITRIDE HAS A SURFACE AREA GREATER THAN 100 MM², IT IS MORE THAN 1, 0 µm THICK AND ITS C-PLANE SURFACE DISLOCATION DENSITY IS LESS THAN 10 6/CM², WHILE ITS VOLUME IS SUFFICIENT TO PRODUCE AT LEAST ONE FURTHER-PROCESSABLE NON-POLAR A-PLANE OR M-PLANE PLATE HAVING A SURFACE AREA AT LEAST 100 MM². MORE GENERALLY, THE PRESENT INVENTION COVERS A BULK NITRIDE MONO-CRYSTAL WHICH IS CHARACTERIZED IN THAT IT IS A MONO-CRYSTAL OF GALLIUM-CONTAINING NITRIDE AND ITS CROSS-SECTION IN A PLANE PERPENDICULAR TO C-AXIS OF HEXAGONAL LATTICE OF GALLIUM-CONTAINING NITRIDE HAS A SURFACE AREA GREATER THAN 100 MM², IT IS MORE THAN 1, 0 µm THICK AND ITS SURFACE DISCOLATION DENSITY IS LESS THAN 10 6/CM².MONO-CRYSTAL ACCORDING TO THE PRESENT INVENTION ARE SUITABLE FOR EPITAXIAL GROWTH OF NITRIDE SEMICONDUCTOR LAYERS. DUE TO THEIR GOOD CRYSTALLINE QUALITY THEY ARE SUITABLE FOR USE IN OPTO-ELECTRONICS FOR MANUFACTURING OPTO-ELECTRONIC SEMICONDUCTOR DEVICES BASED ON NITRIDES, IN PARTICULAR FOR MANUFACTURING SEMICONDUCTOR LASER DIODES AND LASER DEVICES.THE A.M. BULK MONO-CRYSTALS OF GALLIUM-CONTAINING NITRIDE ARE CRYSTALLIZED ON SEED CRYSTALS. VARIOUS SEED CRYSTALS MAY BE USED. THE BULK MONO-CRYSTALS OF GALLIUM-CONTAINING NITRIDE ARE CRYSTALLIZED BY A METHOD INVOLVING DISSOLUTION OF A GALLIUM-CONTAINING FEEDSTOCK IN A SUPERCRITICAL SOLVENT AND CRYSTALLIZATION OF A GALLIUM NITRIDE ON A SURFACE OF SEED CRYSTAL, AT TEMPERATURE HIGHER AND/OR PRESSURE LOWER THAN IN THE DISSOLUTION PROCESS.
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