| 摘要 |
<p>A METHOD IS DESCRIBED FOR FORMING A LOW-K DIELECTRIC FILM, IN PARTICULAR, A PRE-METAL DIELECTRIC (PMD) ON A SEMICONDUCTOR WAFER WHICH HAS GOOD GAP-FILLING CHARACTERISTICS. THE METHOD USES A THERMAL SUB-ATMOSPHERIC CVD PROCESS THAT INCLUDES A CARBON-CONTAINING ORGANOMETALLIC PRECUSOR SUCH AS TMCTS OR OMCTS, AN OZONE-CONTAINING GAS, AND A SOURCE OF DOPANTS FOR GETTERING ALKALI ELEMENTS AND FOR LOWERING THE REFLOW TEMPERATURE OF THE DIELECTRIC WHILE ATTAINING THE DESIRED LOW-K AND GAPFILLING PROPERTIES OF THE DIELECTRIC FILM. PHOSPHOROUS IS A PREFERRED DOPANT FOR GETTERING ALKALI ELEMENT SUCH AS SODIUM. ADDITIONAL DOPANTS FOR LOWERING THE REFLOW TEMPERATURE INCLUDE, BUT ARE NOT LIMITED TO BORON, GERMANIUM, ARSENIC, FLUORINE OR COMBINATIONS THEREOF.(FIG 3)</p> |
