| 摘要 |
A semiconductor device is provided to protect a resistor, a diode and so forth from an overvoltage by forming a protection device near a resistor, a diode and so forth wherein the protection device breaks down prior to the breakdown of a junction area of the resistor, the diode and so forth. A diffusion layer is formed in a semiconductor layer, used as a resistor(1). A first junction area of the diffusion layer and the semiconductor is formed. A second junction area has lower junction tolerance than that of the first junction area, disposed near the diffusion layer. The semiconductor layer can be divided by an isolation area(4,5). The diffusion layer can be formed in a region divided by the isolation area. The protection device can be formed by using the isolation area surrounding the periphery of the diffusion layer.
|
