An apparatus for etching the edge of a wafer is provided to prevent a wafer and a stage from being attached to each other by static electricity and so forth by reducing the contact area between the wafer and the stage. An etching gas supply part supplies an etching gas to the inside of a process chamber(110). A wafer stage(120) includes a stage body(122) disposed in the chamber and a plurality of support members with a pin shape formed on the upper surface of the stage body. The support members support the wafer while the wafer is separated from the stage body. From the etching gas, a shield part(150) shields the center part of the wafer supported on the wafer stage except the edge of the wafer. RF power is applied to a lower electrode(140) disposed along the circumference of the wafer stage. An upper electrode(160) is disposed on the chamber to confront the lower electrode. Lift pins(144) penetrate the stage and transfer vertically so that the wafer is moved up/down with respect to the stage.
