| 摘要 |
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, a resistance is formed. Around the resistance, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the resistance. By use of this structure, when negative ESD surge is applied to a pad for an electrode which applies a voltage to a P type diffusion layer, the PN junction region of the protection element breaks down. Accordingly, the resistance can be protected.
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