SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

[PROBLEMS] To provide a semiconductor light emitting element having a flip-chip structure wherein crystal quality of a semiconductor layer and light extraction efficiency are high. [MEANS FOR SOLVING PROBLEMS] A semiconductor light emitting element is composed of a semiconductor layer (1) including a light emitting layer (12); a refraction index inclined layer (2) formed on the light extracting surface of the semiconductor layer (1); and a supporting substrate (3) bonded on the outer surface of the refraction index inclined layer (2) through an adhesive layer (4). The refraction index of the refraction index inclined layer (2) is substantially equal to that of the semiconductor layer (1) on the semiconductor layer side, and is substantially equal to that of the supporting substrate (3) on the supporting substrate side, and the refraction index is configured to constantly change at a same rate or step by step in the film thickness direction. The refraction index inclined layer (2) is formed by vapor plating.