Insulated-gate bipolar transistor power semiconductor component for frequency converter module, has dopant zone with higher impurity concentration arranged distant from base of trench structure and in space charge area of p-n junction

摘要

The component (1) has vertical gate zones (7) arranged in a trench structure (8) of a semiconductor body (9), where the gate zones have a gate electrode (10) and a gate oxide (11), which covers walls (12) of the trench structure. A bodyzone of a conduction type is arranged between the gate zones, where floating insulating zones (15) are arranged adjacent to the gate zones. A buried dopant zone (18) with higher impurity concentration than a drift zone (14) is arranged distant from a trench base of the trench structure and in a space charge area of a p-n junction (16). An independent claim is also included for a method for manufacturing a power semiconductor component.