| 发明名称 |
N-POLAR ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR |
| 摘要 |
A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarizati on fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.</SDO AB>
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| 申请公布号 |
CA2622750(A1) |
申请公布日期 |
2007.11.29 |
| 申请号 |
CA20062622750 |
申请日期 |
2006.09.18 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
RAJAN, SIDDHARTH;SUH, CHANG SOO;MISHRA, UMESH K.;SPECK, JAMES S. |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
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