发明名称 |
A METHOD TO IMPROVE ADHESION OF DIELECTRIC FILMS IN DAMASCENE INTERCONNECTS |
摘要 |
<p>Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.</p> |
申请公布号 |
SG136807(A1) |
申请公布日期 |
2007.11.29 |
申请号 |
SG20050028915 |
申请日期 |
2002.06.10 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
GOH LUONA;CHOOI SIMON;LOK TOH SIEW;TONG-EARN TAY |
分类号 |
H01L21/3105;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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