METHOD FOR MANUFACTURING FIN TRANSISTOR

摘要

A method for manufacturing a pin transistor is provided to restrain over-etching of an isolation layer generated during a subsequent cleaning process by doping boron into the isolation layer after forming a pin-structured active region. An isolation layer(24A) is formed on a semiconductor substrate(21). Some portion of the isolation layer is etched to form a pin-structured active region(25). Impurities for reducing a wet-etching rate are doped into the isolation layer. A gate oxide layer and a gate electrode are formed in turn on the pin-structured active region. When the impurities are doped, a boron doping is performed. The boron doping is performed through an ion implantation method or plasma doping method. The boron doping is performed with energy of 1 to 20 keV and doze of 1E15 to 3E16 atoms/cm^2. The impurities are doped after forming a barrier covering an upper portion of the pin-structured active region.