| 摘要 |
A solution for etching metal layers is provided to control an etching rate in a wide range when a metal layer is etched, to obtain a good profile, and to ensure etch uniformity even on a large-size substrate. A solution for etching metal layers comprises 5-40wt% of sulfuric acid, 0.5-30wt% of nitric acid, 0.1-10wt% of a halogen-based additive, 0.5-20wt% of an inorganic chelating agent, and the balance of water based on the total weight of the composition. A method for manufacturing an array substrate for liquid crystal display devices includes the steps of: (a) forming a metal layer on the substrate(10); (b) etching the metal layer to form a gate electrode(20a); (c) forming a gate insulating layer(30) on the gate electrode; (d) forming a semiconductor layer on the gate insulating layer; (e) forming source and drain electrodes(50,51) on the semiconductor layer; and (f) forming pixel electrodes(70) on the source and drain electrodes. The etchant solution is used in any one step of the steps (b), (e), and (f).
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