| 摘要 |
A semiconductor memory device is provided to prevent degradation of operation performance of a sense amplifier according to the voltage difference of a VBLP(Voltage Bit Line Precharge) and a VCP(Voltage Cell Plate). A first voltage generation unit(100) generates a first voltage. A second voltage generation unit(200) generates a second voltage. A voltage stabilization unit(300) maintains a constant level of the first voltage and the second voltage according to a first control signal and a second control signal. The first voltage and the second voltage has an equal target voltage level. The first voltage is a bit line precharge voltage and the second voltage is a cell plate voltage.
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