| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light emitting life and light intensity of a nitride semiconductor light emitting element, and to prevent cracks from occurring therein. <P>SOLUTION: The nitride semiconductor light emitting element includes: a substrate having recess portions and projection portions on the surface thereof, which are made of single material; and a nitride semiconductor multilayer structure grown on the substrate. The nitride semiconductor light emitting element has light emitting portions above each of the projection portions and recesses above each of the recess portions formed on the surface thereof, being not buried perfectly by means of crystal growth, wherein the substrate of which projection portions and recess portions are made of the single material, is composed of a nitride semiconductor layer grown on a substrate except for the nitride semiconductor, and the width of the recess is narrower than the width of the corresponding recess portion. <P>COPYRIGHT: (C)2008,JPO&INPIT |
