| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP abrasive and a polishing method for carrying out polishing a silicon oxide film without polishing scratches at a high speed and flatly in a CMP technique of flattening an interlayer insulation film, a BPSG film, and an insulation film for shallow trench separation. SOLUTION: The CMP abrasive contains tetravalent metal hydroxide particles, a nitrogen-containing heterocyclic compound and agent. The amount of the nitrogen-containing heterocyclic compound is preferably 0.01-5 pts.mass with respect to CMP abrasive 100 pts.mass. The metal hydroxide is a rare earth metal hydroxide or zirconium hydroxide wherein a specific surface area is 100 m<SP>2</SP>/g or above and secondary grain diameter is 300 nm or below in median value. COPYRIGHT: (C)2008,JPO&INPIT |
