| 摘要 |
PROBLEM TO BE SOLVED: To set the temperature of a heating plate so that the line width of a resist pattern is formed uniformly in the plane of a wafer. SOLUTION: The heating plate of a PEB device is divided into a plurality of heating plate regions, and the temperature can be set to each heating plate region. In each heating plate region of the heating plate, a temperature correction value for adjusting the temperature in the plane of the heating plate can be set each. The line width in the plane of the wafer is measured (S1) where a photolithography process is completed. The in-plane trend Z of the measured line width is decomposed into a plurality of in-plane trend components Zn by using the Zernike polynomial (S2). An in-plane trend component that can be improved by setting the temperature correction value is extracted from a plurality of calculated in-plane trend components Zn and are added to calculate an improvable in-plane trend Za in the measured line width (S3). The improvable in-plane trend Za is subtracted from the in-plane trend Z that is in a current treatment state for calculating an improved in-plane trend Zf (S4). COPYRIGHT: (C)2008,JPO&INPIT
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