| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has no need of improving the mechanical strength after baking (forming) a porous silica film, and suppresses the oxidation of a lower layer metal film and the increase of the dielectric constant of a lower layer organic film due to the permeation of oxygen to the lower layer. SOLUTION: The semiconductor device comprises an oxygen permeation restricting SiCN film 7 made of a material hardly permeable to oxygen on a silicon substrate 1, and a porous silica film 8 formed in an oxygen-containing atmosphere on the surface of the restricting film 7. COPYRIGHT: (C)2008,JPO&INPIT
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