| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase deposition apparatus having a low-frequency of exchanging the components due to the deposition of a reaction product, and also to provide a method of manufacturing a vapor phase deposition substrate. SOLUTION: The vapor phase deposition apparatus comprises a container 11; holder 13 which arranges semiconductor substrates 12 stored in the container 11 in the circumferential direction with their faces down, and inclined with respect to the direction of a material gas flow and holds them so that they can rotate on their axes and can also move around the center of the holder 13; susceptor 14; perimeter ring 15; heater 16 which heats the semiconductor substrates 12 from the side opposite from the crystal growth surfaces; and nozzle 17 which supplies the material gas onto the semiconductor substrates 12 radially from the center toward the outer periphery of the susceptor 14. By inclining the semiconductor substrates 12, a disturbance of the material gas flow due to a step caused between the susceptor 14 and the semiconductor substrates 12 by deposition of the reaction product is suppressed, the occurrence of crystal defects in the outer periphery of the semiconductor substrates 12 is delayed, thereby lowering the frequency of exchanging the components. COPYRIGHT: (C)2008,JPO&INPIT
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