摘要 |
Protection methods and protection systems, for high current semiconductor devices with diode junctions, that detect the anomalies in the local temperature at small areas of the junction and protect the device from accelerated aging and premature catastrophic damage. In an embodiment of the method of this invention for protecting a high current semiconductor devices with diode junctions, anomalies in the electrical or optical behavior of the junction are detected and, upon detection of the anomalies, power is diverted away from or around the device.
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