发明名称 Methods and systems for high current semiconductor diode junction protection
摘要 Protection methods and protection systems, for high current semiconductor devices with diode junctions, that detect the anomalies in the local temperature at small areas of the junction and protect the device from accelerated aging and premature catastrophic damage. In an embodiment of the method of this invention for protecting a high current semiconductor devices with diode junctions, anomalies in the electrical or optical behavior of the junction are detected and, upon detection of the anomalies, power is diverted away from or around the device.
申请公布号 US2007273432(A1) 申请公布日期 2007.11.29
申请号 US20040922753 申请日期 2004.08.20
申请人 SCIENCE RESEARCH LABORATORY, INC. 发明人 MANGANO JOSEPH
分类号 G05F1/10;H01S5/00;H01S5/068;H03K17/082 主分类号 G05F1/10
代理机构 代理人
主权项
地址