METHOD FOR DRY-ETCHING INTERLAYER INSULATING FILM

摘要

In a method for dry-etching an interlayer insulating film, the interlayer insulating film is microfabricated while forming a polymer film on an ArF resist or a KrF resist arranged on the interlayer insulating film by an etching gas. The etching gas is introduced at a pressure of 0.5Pa or less, and etching is performed while forming the polymer film having a C-F bonding peak near 1,200cm<SUP>-1</SUP>, a C-N bonding peak near 1,600cm<SUP>-1</SUP> and a C-H bonding peak (spectrum measured by a Fourier transform infrared spectrophotometer) near 3,300cm<SUP>-1</SUP>.