METHOD OF SILICON SUBSTRATE BASED LIGHT EMITTING DIODES USING FOR WAFER BONDING PROCESS

摘要

A method for fabricating a silicon-based LED using a wafer bonding process is provided to improve the external extraction efficiency of a nitride semiconductor light emitting device while contributing to improvement of optical output by reflecting the light emitted through a high reflective metal thin film. Photoresist is deposited on a substrate, and a predetermined pattern is formed. After the substrate is etched by using the photoresist as a mask, the photoresist is eliminated. A nitride-based thin film is grown. Ohmic metal(11), reflective metal(12) and bonding metal(13) are sequentially stacked on the nitride-based thin film. Bonding metal and a carrier wafer are stacked. The substrate and the nitride-based thin film are removed, and ohmic contact metal is formed. One of a positive type, a negative type or an image reverse type is used as the photoresist.