PASSIVATION METHOD OF ORGANIC THIN-FILM TRANSISTOR

摘要

A method for forming a passivation layer of an organic thin film transistor is provided to protect an organic thin film transistor from oxygen and water by forming an organic passivation layer and an inorganic passivation layer doubly or triply. A gate line is formed on a substrate(11). A gate insulation layer(13) is formed on the resultant structure. A source/drain electrode(14) is formed on the gate insulation layer. An organic semiconductor(15) is formed on the gate insulation layer having the source/drain electrode. A first organic passivation layer(16) is formed on the organic semiconductor. A second organic passivation layer is formed on the first organic passivation layer, capable of being photo-patterned. The first and the second organic passivation layers can be made of PVA(polyvinyl chloride) and dichromated PVA. A third organic passivation layer(19) can be formed on the second passivation layer.