| 摘要 |
<p>An interposer for assembly with a semiconductor die and methods of manufacture are disclosed. The interposer may include at least one passive element at least partially defined by at least one recess formed in at least one dielectric layer of the interposer. The at least one recess may have dimensions selected for forming the passive element with an intended magnitude of at least one electrical property. At least one recess may be formed by removing at least a portion of at least one dielectric layer of an interposer. The at least one recess may be at least partially filled with a conductive material. For instance, moving, by way of squeegee, or injection of a conductive material at least partially within the at least one recess, is disclosed. Optionally, vibration of the conductive material may be employed. A wafer-scale interposer and a system including at least one interposer are disclosed.</p> |
