| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device using nitride semiconductor materials such as InGaAlN in a state with better characteristics and with easier manufacturing. <P>SOLUTION: An active layer 105 is formed on a cladding layer 104. The active layer 105 is a layer of a structure where a plurality of island-shaped parts 105a made of InN are arrayed on the same plane, and each island-shaped part 105a is formed to be, for example, a diameter of approximately 2 nm and a height of approximately 1 nm. In such a manner, dimensions of the island-shaped parts 105a are set to be not larger than spread of a wave function of electrons, and accordingly, a quantum effect is obtained. Furthermore, with the dimensions of the island-shaped parts 105a, a light-emitting wavelength of the active layer 105 in the semiconductor light-emitting device is substantially decided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
