NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a high luminance nitride-based semiconductor light-emitting diode adapted to optimize a current diffusion effect and minimize an electrostatic discharge impact to make it possible to stabilize from a high static electricity.

SOLUTION: The nitride-based semiconductor light-emitting diode is provided with: a substrate; an n-type nitride semiconductor layer 120 formed on the substrate; an active layer formed on a given region on the n-type nitride semiconductor layer 120; a p-type nitride semiconductor layer formed on the active layer; a p-type electrode 160 with a p-type branch electrode 160a formed on the p-type nitride semiconductor layer; a p-type ESD pad 160b formed at the extremity of the p-type branch electrode 160a having a width wider than that of the end portion of the p-type branch electrode 160a; an n-type electrode 150 having an n-type branch electrode 150a, the n-type electrode 150 formed on an area of the n-type nitride semiconductor layer 120 where the active layer is not formed; and an n-type ESD pad 150b formed at the extremity of the n-type branch electrode 150a having a width wider than that of the end portion of the n-type branch electrode 150a.

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