| 摘要 |
<p>An organic FET comprising a gate insulating film formed on a substrate, a source electrode composed of a metal and a drain electrode composed of a metal arranged on the gate insulating film oppositely in the horizontal direction, and an organic semiconductor layer covering the gate insulating film, the source electrode and the drain electrode. This organic FET is characterized in that a first organic molecule layer composed of an alkanethiol molecule having 4 or more carbon atoms is formed, respectively, between the upper surface of the source electrode and the semiconductor layer and between the upper surface of the drain electrode and the semiconductor layer, and a second organic molecule layer composed of a p-thiocresol molecule or a thiophenol molecule is formed, respectively, between the opposing side face of the source electrode and the semiconductor layer and between the opposing side face of the drain electrode and the semiconductor layer.</p> |
