| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor employing a carbon nano-tube bundle by simultaneously direction-controlling the bundle of hundreds and thousands of carbon nano-tubes to form them in a horizontally direction. SOLUTION: The transistor has an insulating film 2 formed on a substrate 1, the carbon nano-tube bundle 4 extending along the upper surface of the insulating film 2, an opening formed on the insulating film 2, and a catalyst layer 3 formed so as to be closer to the side wall of the opening on one part region of the substrate 1 exposed in the opening. The carbon nano-tube bundle 4 extending along the upper surface of the insulating film 2 is bent, its one end contacts with the catalyst layer 3, and the carbon nano-tube bundle 4 constitutes a channel. COPYRIGHT: (C)2008,JPO&INPIT |
