EPITAXIAL SUBSTRATE, EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a means for obtaining an electronic device at practical level formed from GaN based materials by improving properties such as high-speed operation. SOLUTION: A first group III nitride base layer 2 and a second group III nitride base layer 3 including at least Al are formed on a base material 1 in order. A region A where an acceptor impurity exists is then formed so as to be extended from a boundary face 9 between the base layer 2 and the base layer 3 to the base layer 3 to form an epitaxial substrate 5, and the substrate 5 is used as a substrate when the electronic device is manufactured. COPYRIGHT: (C)2008,JPO&INPIT