发明名称 |
WIRE TYPE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATION THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a wire type semiconductor device capable of ensuring a restrained short channel effect and a high operation performance, and to provide an economical method for fabrication thereof. SOLUTION: A wire type semiconductor comprises a main unit, a semiconductor substrate equipped with a pair of support poles projected upward from the main unit and at least one fin projected upward from the main unit with its ends connected to the pair of support poles, at least one semiconductor wire formed separately on at least one fin with its ends connected to the pair of support poles, a common gate electrode formed enclosing the external surface of at least one semiconductor wire and a gate insulating film placed between at least one semiconductor wire and the common gate electrode. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2007311762(A) |
申请公布日期 |
2007.11.29 |
申请号 |
JP20070055726 |
申请日期 |
2007.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM SUK-PIL;PARK YOUNG-SOO;KIM WON-JOO |
分类号 |
H01L29/786;H01L29/41;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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地址 |
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