| 摘要 |
PROBLEM TO BE SOLVED: To attain the low resistance and the high output power of a surface-emitting laser (VCSEL) device having tunnel junction. SOLUTION: The VCSEL device 10 has a tunnel junction 17 between an n-type lower DBR mirror 12 and an n-type upper DBR mirror 19, and the tunnel junction 17 has a quantum dot layer 32 of 2.5 mono layer thickness between a p<SP>+</SP>-GaAs layer 31 and an n<SP>+</SP>-InGaAs layer 33. The quantum dot layer 32 has a small bandgap energy, and by raising the tunnel probability in the tunnel junction 17, the low resistivity and the high output power of the VCSEL device 10 are made to be possible. COPYRIGHT: (C)2008,JPO&INPIT
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