发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To suppress the occurrence of the distortion of the modulated light wavelength in a distributed feedback semiconductor laser. SOLUTION: This semiconductor laser comprises a substrate 26, an n-clad layer 28 provided on the substrate 26, an active layer 36 provided on the n-clad layer 28; a second p-clad layer 42 provided on the active layer 36 and forming a waveguide ridge 12; and a diffraction grating layer 30 disposed between the active layer 36 and the n-clad layer 28, or between the active layer 36 and the second p-clad layer 42, and having a phase shift structure 30b in a part in the optical waveguide direction. The width of the second p-clad layer 42 is extended in the location corresponding to the phase shift structure 30b in the diffraction grating layer 30. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007311522(A) 申请公布日期 2007.11.29
申请号 JP20060138556 申请日期 2006.05.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAGI KAZUHISA
分类号 H01S5/12 主分类号 H01S5/12
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