| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of raising the yield of a semiconductor integrated circuit by preventing the peeling of a film in the outer periphery of a semiconductor substrate, concerning the semiconductor device manufacturing method for reducing a step between a circuit formation region and a non-circuit formation region by remaining a metallic film, which is deposited in forming wiring in the circuit formation region, in the non-circuit formation region of the semiconductor substrate. SOLUTION: A positive resist film 24 is formed so as to cover the upper part of the metallic film 20, and to expose the metallic film 20 which is positioned in the outer periphery of the semiconductor substrate 11, in the metallic film 20 corresponding to the non-circuit formation region B. Then, a negative resist film 25 is formed on the metallic film 20 corresponding to the non-circuit formation region B so as to be superimposed on the positive resist film 24. Then, the metallic film 20 is etched by defining the exposed and developed positive resist film 24 as a mask. COPYRIGHT: (C)2008,JPO&INPIT
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