发明名称 ELECTRONIC CIRCUIT, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE EQUIPPED THEREWITH
摘要 PROBLEM TO BE SOLVED: To provide an A/D conversion circuit suitable for a polysilicon thin film transistor. SOLUTION: The electronic circuit equipped with the transistor using thin film polysilicon for an active layer on an active matrix substrate 101 includes a sensor 1 for converting the amount of measurement to the amount of current, current-voltage conversion circuits (a capacitor 12, a capacitor 14, a transistor 11, a transistor 15) and a voltage detection circuit (a comparator circuit 3) which detects the converted voltage and outputs a prescribed signal. The current-voltage conversion circuit includes storage circuits (capacitors 12 and 14) and range switching circuits (transistors 11, 15) which switch the current-voltage conversion ranges of the current-voltage conversion circuits by switching capacitance values of the storage circuits. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007310051(A) 申请公布日期 2007.11.29
申请号 JP20060137410 申请日期 2006.05.17
申请人 EPSON IMAGING DEVICES CORP 发明人 KOBASHI YUTAKA
分类号 G09G3/36;G02F1/133;G09G3/20;G09G3/34;H01L29/786 主分类号 G09G3/36
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